| PART |
Description |
Maker |
| 2SD1068 |
TENTATIVE
|
SONY[Sony Corporation]
|
| STK621-018 |
TENTATIVE
|
Sanyo Semicon Device
|
| 2SC5363TENTATIVE |
2SC5363(Tentative) - NPN Transistor
|
Matsshita / Panasonic
|
| G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
| R5F21344MDFP R5F21344MNFP R5F21345MDFP R5F21345MNF |
Specifications in this document are tentative and subject to change
|
Renesas Electronics Corporation
|
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TC7SET86F02 TC7SET86F TC7SET86FU |
TENTATIVE (UNDER DEVELOPMENT) TOSHIBA CMOS DIGITAL INTERATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| 1MBI150SH-140 |
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
Tentative target specification
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| K9KAG08U0MPIB00 K9KAG08U0M-PCB0000 K9KAG08U0MPCK00 |
sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
|
Samsung semiconductor
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| 2SA493 2SA493-GR 2SA493-Y |
PNP transistor for low noise audio amplifier applications
From old datasheet system
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
TOSHIBA
ETC[ETC]
List of Unclassifed Manufacturers
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
