| PART |
Description |
Maker |
| 63S440 |
(63S440 / 63S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
| 8200901JA 8200901LA 82009013X 8200901LX 8200901KX |
x8 PROM x8胎膜早破
Memory, Digital, Bipolar, 64K PROM
|
N/A
|
| PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44
1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40
1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
|
Intel, Corp.
INTEL CORP
|
| CY7C291A-25JC CY7C291A-25PC CY7C291A-35JC CY7C291A |
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 35 ns, PDIP24
2K x 8 Reprogrammable PROM 2K X 8 OTPROM, 50 ns, PDIP24
2K x 8 Reprogrammable PROM 2K X 8 UVPROM, 50 ns, CDIP24
MICROMINIATURE POLARIZED LATCHING RELAY
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C251 7C251 CY7C254 |
16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的PROM) 16K的8电源开关和可再编程胎膜早破6K的8功率转换和可重复编程的可编程
16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的 PROM)
From old datasheet system
16K x 8 Power Switched andReprogrammable PROM
|
Cypress Semiconductor Corp.
|
| MX28F1000PRC-90-C4 MX28F1000PQC-90-C4 MX28F1000PTC |
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, REVERSE, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PQCC32 PLASTIC, LCC-32
128K X 8 FLASH 12V PROM, 90 ns, PDSO32 PLASTIC, TSOP1-32
128K X 8 FLASH 12V PROM, 90 ns, PDIP32 0.600 INCH, PLASTIC, DIP-32
128K X 8 FLASH 12V PROM, 150 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| CY7C261 CY7C264 CY7C263 |
8K x 8 Power-Switched and Reprogrammable PROM(8K x 8功率转换可重复编程的PROM)
8K x 8 Power-Switched and Reprogrammable PROM(8K x 8功率转换可重复编程的 PROM) 8K的8电源开关和可重编程胎膜早破K的8功率转换和可重复编程的可编程
|
Cypress Semiconductor Corp.
|
| K8P3215UQB-PE4B0 K8P3215UQB-DI4A0 |
2M X 16 FLASH 2.7V PROM, 60 ns, PDSO48 20 X 12 MM, PLASTIC, TSOP1-48
2M X 16 FLASH 2.7V PROM, 55 ns, PBGA48 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
|
Analog Devices, Inc.
STMicroelectronics N.V.
|
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| S29GL032N90FAI033 S29GL032N90BAI043 S29GL032N70TAI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA64
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PDSO56
2M X 16 FLASH 3V PROM, 90 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM
512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PDSO32
512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol...
SILICON STORAGE TECHNOLOGY INC
|
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