PART |
Description |
Maker |
DUI230S DU1230S |
RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz RF MOSFET Power Transistor锛?30 W锛?12V锛?2 -175 MHz RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz 射频MOSFET功率晶体管,3OW2V - 175兆赫 RF MOSFET Power Transistor30 W12V2 -175 MHz 射频MOSFET功率晶体管,30瓦,12V的,2 -175兆赫 RF MOSFET Power Transistor/ 3OW/ 12V 2 - 175 MHz
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Hubbell Wiring Device-Kellems TE Connectivity, Ltd. Tyco Electronics
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STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
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BUZ100L C67078-S1354-A2 BUZ100LC67078-S1348-A2 BUZ |
N-Channel SIPMOS Power Transistor Omnifet: fully autoprotected Power MOSFET SIPMOS ? Power Transistor From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] http://
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IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 67A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|的Z -委员
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Ricoh Co., Ltd.
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IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254 TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五(巴西)直| 10A条(丁)|254 TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五(巴西)直| 5A条(丁)|54 TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 7A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五(巴西)直|3A条(丁)|10AC TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五(巴西)直| 5A条(丁)|220
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MITSUMI ELECTRIC CO., LTD. Infineon Technologies AG HIROSE ELECTRIC Co., Ltd.
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BSC030N03LSG |
Power Transistor 23 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET OptiMOS? Power-MOSFET OptiMOS?? Power-MOSFET
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Infineon Technologies AG
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO Power MOSFET(Vdss=50V) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
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International Rectifier
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BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor From old datasheet system SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价)
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
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BUZ101 C67078-S1350-A2 BUZ101E3045 BUZ101STS |
N-Channel SIPMOS Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance) 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor From old datasheet system
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] http://
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SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
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VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
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