| PART |
Description |
Maker |
| GM71V16163BT-6 GM71V16163BJ-8 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
AMIC Technology, Corp.
|
| HM5165160AJ-5 |
x16 Fast Page Mode DRAM
|
|
| GM71V18160CJ-7 GM71V18160CT-6 |
x16 Fast Page Mode DRAM
|
|
| GM71C4270ALJ-80 GM71C4270AT-70 GM71C4270ALT-70 GM7 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
AMIC Technology, Corp.
|
| HM51W16160AJ-6 HM51W16160ALTT-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
E-Z Hook,A Div. of Tektest, Inc.
|
| HM514260ALJ-6R HM51S4260ALJ-6R HM514260ALZ-6R HM51 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
3M Company
|
| NN514170LJ-45 NN514170LJ-50 NN514170LJ-70 NN514170 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Microchip Technology, Inc.
|
| V53C665Z80 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
EPCOS AG
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
