| PART |
Description |
Maker |
| MCH5810 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| TT8U1 TT8U109 |
1.5V Drive Pch +SBD MOSFET
|
Rohm
|
| US5U38 |
2.5V Drive Pch SBD MOSFET
|
Rohm
|
| TT8U2TR |
1.5V Drive Pch SBD MOSFET
|
ROHM
|
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| CPH5802 |
Pch SBD
DC / DC Converter Applications
|
Sanyo Semicon Device
|
| RZQ045P01 RZQ045P01TR |
1.5V Drive Pch MOSFET
4.5 A, 12 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET TSMT6, 6 PIN
|
Rohm
Xiamen Hongfa Electroacoustic Co., Ltd.
|
| FX6ASJ-06 |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE 6 A, 60 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
