| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
Siemens Semiconductor G...
|
| Q62702-A1050 |
Silicon Switching Diode (For high speed switching applications)
|
Siemens Semiconductor G...
|
| 1SS389 E000306 |
DIODE (HIGH SEPPD SWITCHING APPLICATION)
From old datasheet system
HIGH SPEED SWITCHING APPLICATION
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SC3811 |
Silicon NPN epitaxial planer type(For high speed switching)
Transistor
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| H5N2003P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ189 2SJ189TP-FA |
Very High-Speed Switching Applications
4 A, 30 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| RJL6012DPE RJL6012DPE-00J3 RJL6012DPE-12 RJL6012DP |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPD83V-1N4148 |
High Speed Switching Diode Die 0.15 Amp, 100 Volt
|
Central Semiconductor C...
|
| FS50SM-06 |
HIGH-SPEED SWITCHING USE
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 1SS119 |
Silicon Epitaxial Planar Diode for High Speed Switching
|
Hitachi Semiconductor
|
