| PART |
Description |
Maker |
| Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
Siemens Semiconductor G...
|
| 2SK579 2SK579L 2SK579S 2SK580 2SK580L 2SK580S |
HIGH SPEED POWER SWITCHING
(2SK579 / 2SK580) HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| Q62702-A1050 |
Silicon Switching Diode (For high speed switching applications)
|
Siemens Semiconductor G...
|
| 1SS389 E000306 |
DIODE (HIGH SEPPD SWITCHING APPLICATION)
From old datasheet system
HIGH SPEED SWITCHING APPLICATION
|
Toshiba Semiconductor
Toshiba Corporation
|
| 2SK3177-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ504 |
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ527 2SJ527L 2SJ527S |
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJL6020DPK10 RJL6020DPK RJL6020DPK-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0T2 |
600V - 10A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IKW40N65ES5-15 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| Q62702-A1046 |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching)
|
Siemens Semiconductor G...
|
