| PART |
Description |
Maker |
| UN2H8-4500L UN2H8-5000LL UN2H8-6000L UN2H8-6000LL |
High Voltage 2-Electrode Gas Discharge Tube
|
UN Semiconducctor INC
|
| 2095-250-BT1LF 2095-500 2095-500-BT1LF 2095-140 20 |
High Voltage 2-Electrode Gas Discharge Tube
|
Bourns Electronic Solutions
|
| SPC-06703-470 SPC-06703 SPC-06703-100 SPC-06703-10 |
STAINLESS STEEL ELECTRODE, 1M; Diameter, External:6mm; Length / Height, external:1m RoHS Compliant: NA
SMD POWER INDUCTORS SMD功率电感
ELECTRODE CONNECTOR; SMD功率电感
|
MICRO-ELECTRONICS[Micro Electronics]
|
| AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
ETC
|
| C0603Y153K5RACAUTO |
SMD Auto X7R FF, Ceramic, Floating Electrode, 0.015 uF, 10%, 50 V, 0603, X7R, SMD, MLCC, FF-CAP, Floating Electrode, Automotive Grade
|
Kemet Corporation
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
| IDT72V36100 IDT72V36100L10PF IDT72V36100L15PF IDT7 |
3.3 VOLT HIGH-DENSITY SUPERSYNC⑩ II 36-BIT FIFO
3.3 VOLT HIGH-DENSITY SUPERSYNC II 36-BIT FIFO
|
IDT[Integrated Device Technology]
|
| IDT72T3675L4BB IDT72T3685L7BBI IDT72T3695L5BBI IDT |
2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS 8K X 36 OTHER FIFO, 3.6 ns, PBGA208
2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS 2.5伏高速TeraSyncTM FIFO6位配
|
Integrated Device Technology, Inc.
Integrated Device Techn...
|
| L1939 L1939-04 |
300 μm emission spot, no electrode in emission area
300 m emission spot, no electrode in emission area
300 m emission spot/ no electrode in emission area
300 レm emission spot, no electrode in emission area 300レ米发射现场，没有发射电极面
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| MA4PK2000 MA4PK2000-3000 |
2000 Volt & 3000 Volt PIN Diodes MA4PK200X & MA4PK300X
|
Tyco Electronics
|
