| PART |
Description |
Maker |
| BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB
|
Infineon
|
| IR3551 IR3551MPBF IR3551MTRPBF |
The IR3551 integrated PowIRstage? is a synchronous buck gate driver co-packed with a control MOSFET and a synchronous MOSFET with integrated Schottky diode.
|
International Rectifier
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FDFM2P1100508 FDFM2P110 |
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| BF1009SR BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| FDFME3N311ZT |
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ
Integrated N-Channel PowerTrench垄莽 MOSFET and Schottky Diode 30 V, 1.6 A, 299 m楼?
|
Fairchild Semiconductor
|
| SRN8040 SRN8040-100M SRN8040-101M SRN8040-150M SRN |
Semi-shielded Power Inductors
|
Bourns Electronic Solutions
|
| 521-0963 521-0975 |
Polypropylene Semi-Rigid Notebooks
|
List of Unclassifed Manufacturers
|
| SRN8040TA-100M |
Semi-shielded Power Inductors
|
Bourns Electronic Solut...
|
| AS568 |
Semi-Precision Power Wirewound Resistor
|
International Resistive
|
| NAS-514XXX |
Semi-Precision Power Wirewound Resistor
|
International Resistive
|
