| PART |
Description |
Maker |
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM6472-16UL |
HIGH POWER P1dB=42.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM6472-6UL |
HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| AWT6106 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
|
| AWT6275 |
HELP IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 帮助膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
|
ANADIGICS, Inc.
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
