| PART |
Description |
Maker |
| 009-0631-900 009-0933-900 009-0089-900 009-0172-90 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| MPXHZ6400AC6T1 MPXHZ6400A |
Media Resistant and High Temperature Accuracy Intergrated Silicon Pressure Sensor
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MPXHZ6401A MPXHZ6401A6T1 MPXHZ6401A6U |
Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| MPXHZ6116A MPXHZ6116A6T1 MPXHZ6116A6U |
Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160 |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 F |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MA106.C.LB.001 |
UV and vandal resistant PC housing
|
Taoglas antenna solutio...
|
