| PART |
Description |
Maker |
| MB8464A |
CMOS 64K Low Power SRAM
|
Fujitsu
|
| LY626416 LY626416GL LY626416GV LY626416LL LY626416 |
64K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L6416ML-45LLT LY62L6416ML-45SLET LY62L6416ML-4 |
64K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV101 |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| P4C187-20PC P4C187-20PI P4C187-20PM P4C187-20PMB P |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS
64K X 1 STANDARD SRAM, 35 ns, QCC28
64K X 1 STANDARD SRAM, 35 ns, CDIP22
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| IS62U6416LL-20B IS62U6416LL-20K IS62U6416LL-20BI I |
64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IDT71T016 IDT71T016L200PHI IDT71T016L150PH IDT71T0 |
High-Performance Current-Mode PWM Controller 14-SOIC -40 to 85 16K X 4 STANDARD SRAM, 35 ns, CDIP24
LOW POWER 2V CMOS SRAM 1 MEG (64K x 16-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO44
CMOS STATIC RAMs 64K (16K x 4-BIT) Added Chip Select and Output Controls 16K X 4 STANDARD SRAM, 25 ns, CDIP24
SWITCH, FLUSH, 16MM, MOM; Switch function type:Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:16mm; Depth, external:29.5mm; Configuration, contact:DPCO; Current, RoHS Compliant: Yes
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| BS616LV1011 BS616LV1011EIP70 BS616LV1011AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
