
	Part Number	Hot Search : CRMZN P0300ECL SLDB056S AD7533KR V20P30P T9G03609 MJD44H11 BU902
	Product Description
	Full Text Search

LC3664RSL-12 - Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM

LC3664RSL-12_2233479.PDF Datasheet


Part No.	LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 LC3664RSL-10
Description	Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM
File Size	246.99K / 7 Page
Maker	SANYO
Homepage
Download	[ LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 LC3664RSL-10 Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 LC3664RSL-10 Datasheet PDF Downlaod from Datasheet.HK ] [LC3664RSL-12 LC3664RML-10 LC3664RM-15 LC3664RL-15 LC3664RSL-10 Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for LC3664RSL-12 ] [ Price & Availability of LC3664RSL-12 by FindChips.com ]

Full text search : Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM

Product Description search : Access time: 100ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM Access time: 150ns; V(cc)max: 7V; 64K (8192 words x 8-bit) SRAM

Related Part Number

PART	Description	Maker
5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59	512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none. 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option. 512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.	Aeroflex Circuit Technology
WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8	Access time:150 ns; 512K x 8 CMOS EEPROM module Access time:200 ns; 512K x 8 CMOS EEPROM module Access time:250 ns; 512K x 8 CMOS EEPROM module Access time:300 ns; 512K x 8 CMOS EEPROM module	White Electronic Designs
A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8	Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM 256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM	AMIC Technology, Corp.
5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59	512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)	Aeroflex Circuit Technology
AM29F002BT-90ED AM29F002BB-70ED AM29F002NBB-70PD	Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 Flash Memory IC; Package/Case:32-DIP; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes	SPANSION LLC
M41T6206 M41T62Q6F M41T65Q6F M41T62 M41T63 M41T63Q	Serial Access Real-Time Clock with Alarms	STMICROELECTRONICS[STMicroelectronics]
UT61L256CJC-10 UT61L256CJC-12 UT61L256CJC-15 UT61L	Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM	UTRON Technology
UT62257CLS-35L	Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM	UTRON Technology
M41T81S07 M41T81S	Serial access real-time clock with alarms(带报警的串行存取实时时钟)	意法半导 STMicroelectronics
AS7C3256-12TC AS7C256-12TI AS7C3256-12TI	3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time 5V 32K x 8 CM0S SRAM (common I/O), 12ns access time	Alliance Semiconductor

Related keyword From Full Text Search System

LC3664RSL-12 maker	LC3664RSL-12 marking code	LC3664RSL-12 receptacle	LC3664RSL-12 mount	LC3664RSL-12 Bandwidth
LC3664RSL-12 Processor	LC3664RSL-12 planar	LC3664RSL-12 Transistors	LC3664RSL-12 Differential	LC3664RSL-12 motorola

Price & Availability of LC3664RSL-12

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

0.36048603057861