| PART |
Description |
Maker |
| KVR133X64C3/512 |
512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| HYB39S512400AT HYB39S512400ATL HYB39S512XX0ATL HYB |
SDRAM Components - 512Mb (64M x 8) PC133 3-3-3
SDRAM Components - 512Mb (128M x 4) PC133 3-3-3
SDRAM Components - 512Mb (32M x 16) PC133 3-3-3
512-Mbit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| KVR533D2S8F4/512I |
Memory Module Specifications (512MB 64M x 72-BIT PC2-4200 CL4 ECC 240-Pin FBDIMM) 记忆体模组规格（512MB4米72位的PC2 - 4200 CL4 ECC40引脚FBDIMM
|
Electronic Theatre Controls, Inc.
|
| EBD52UD6ADSA-E EBD52UD6ADSA-6B-E EBD52UD6ADSA-7A-E |
512MB DDR SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| V436664X24VXSG-75PC V436664X24V V436664X24VXSG-10P |
512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M X 64 3.3VOLT
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HYM72V64M636BLF8-H HYM72V64M636BLF8-K HYM72V64M636 |
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144
SDRAM - SO DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| HYM72V64736BLT8-HP HYM72V64736BT8-HP HYM72V64736BT |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
SDRAM - Unbuffered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| EBE51RD8AGFA-6E-E EBE51RD8AGFA EBE51RD8AGFA-4A-E E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51ED8AGFA-6E-E EBE51ED8AGFA EBE51ED8AGFA-4A-E E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EBE51ED8AGFA-5C-E EBE51ED8AGFA-6E-E EBE51ED8AGFA-4 |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
LJT 24C 12#16 12#12 SKT PLUG
|
Elpida Memory, Inc.
|
