| PART |
Description |
Maker |
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| HB56A432SBR-6 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
ITT, Corp.
|
| GMM7321200ANS-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| HYM532256ALM-60 HYM532256ALM-80 HYM532256ALM-70 HY |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
LG, Corp.
|
| HB56G232B-6 HB56G132B-6 HB56G232B-6L |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Bourns, Inc.
|
| GMM7321000BSG-80 GMM7321000BS-70 GMM7321000BS-60 G |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
|
| AK5328192WP-60 AK5328192WP-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
x32FastPageModeDRAMModule
|
HIROSE ELECTRIC Co., Ltd.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| MT9LD272G-7S MT9LDT272G-7 MT9LDT272G-7XS MT9LD272G |
x72 Fast Page Mode DRAM Module
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd.
|
| HYM591000BM-70 HYM591000BM-60 HYM591000BLM-70 |
x(8 1) Fast Page Mode DRAM Module
|
|
