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GS8171DW36A - 18Mb Common I/O DW SigmaRAMs

GS8171DW36A_2107261.PDF Datasheet


 Full text search : 18Mb Common I/O DW SigmaRAMs
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GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
GSI Technology
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 1.8V 1M x 18 QDR II PipeLined SRAM
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Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
IDT
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Integrated Device Technology, Inc.
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GS8171DW72AC-300 GS8171DW36AC-300 GS8171DW36AC-300 18Mb ??x1Dp HSTL I/O Double Late Write SigmaRAM
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IS61VPS102418A-250B2I IS61LPS102418A-200B2 IS61VPS 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
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GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18,为512k × 36,为512k × 36 35.7同步突发静态存储器
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
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IDT71P73204 IDT71P73204167BQ IDT71P73804 IDT71P738 18Mb Pipelined DDR垄芒II SRAM Burst of 4
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700V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
500V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
400V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
200V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
150V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
800V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
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