PART |
Description |
Maker |
2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC[NEC]
|
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
2SB1432 |
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
|
NEC
|
BD180 ON0190 |
POWER TRANSISTOR PNP SILICON CASE 77-09 TO-225AA TYPE From old datasheet system Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SB1094 2SB1094L 2SB1094M |
Silicon transistor PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC Corp.
|
2SC3739 2SC3739-T2B 2SC3739-L |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Silicon transistor
|
http:// NEC
|
2SB736 2SB736A 2SB736-T1B 2SB736A-T1B 2SB736ABW3-T |
BJT 双极型晶体管 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) Silicon transistor
|
NEC, Corp. NEC[NEC]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
|
MJ423_D ON1993 MJ423 |
POWER TRANSISTOR NPN SILICON From old datasheet system 10 AMPERE POWER TRANSISTOR NPN SILICON 125 WATTS
|
ONSEMI[ON Semiconductor]
|
CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202 Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|
BD135 BD139 ON0184 BD137 |
Plastic Medium Power Silicon NPN Transistor 1.5 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-225AA POWER TRANSISTORS NPN SILICON CASE 77-09 TO-225AA TYPE From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|