| PART |
Description |
Maker |
| M68732UL 68732UL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 380-400MHz, 7W, FM PORTABLE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFH12N40 RFH12N35 |
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs 12 A, 350 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| EL5103IW-T7 EL5103IW-T7A EL5302IU EL5102IS EL5102 |
400MHz Slew Enhanced VFAs
Single, 400MHz High Speed Voltage Feedback Amplifier with Enable
Triple, 400MHz, Slew Enhanced Voltage Feedback Amplifier with Enable
|
http://
INTERSIL[Intersil Corporation]
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| RFPA1012 RFPA1012PCK-411 RFPA1012PCK-412 RFPA1012S |
GaAs HBT 400MHz to 2700MHz Power Amplifier
|
RF Micro Devices
|
| RFPA3809PCK-410 RFPA3809PCK-411 RFPA3809SQ RFPA380 |
GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER
|
RF Micro Devices
|
| FCD380N60E |
N-Channel SuperFETII MOSFET 600 V, 10.2 A, 380 m
N-Channel SuperFET? II MOSFET 600 V, 10.2 A, 380 mΩ
|
Fairchild Semiconductor
|
| HXL1225 HML1225 |
0.8A 300.380 VOLTAGE SCRS IGT<200uA
28.37 Kbytes
0.8A 300.380 VOLTAGE SCRS IGT<200uA
|
Hi-Sincerity Mocroelect...
Hi-Sincerity Mocroelectronics
Hi-Sincerity Microelectronics
|
| 27C512A-90/J 27C512A-90/K 27C512A-70/J 27C512A-70/ |
Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps
500MHz, Low-Power Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
Evaluation Kit for the MAX4104, MAX4105, MAX4304, MAX4305
Micropower, SOT23, Rail-to-Rail, Fixed-Gain GainAmp Open-Loop GainAmps Op Amps
400MHz, Ultra-Low-Distortion Op Amps
x8 EPROM x8存储
330MHz Buffered Video Switches Crosspoint Building Blocks x8存储
350MHz, Ultra-Low-Noise Op Amps x8存储
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers x8存储
|
Integrated Device Technology, Inc.
|
| D2007UK D2007 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
