| PART |
Description |
Maker |
| TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM
(TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| KK74AC86 KK74AC86D |
Quad 2-Input Exclusive OR Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK74ACT86 KK74ACT86D |
Quad 2-Input Exclusive OR Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4023B |
Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| KK74ACT20 KK74ACT20D KK74ACT20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK74ACT00 KK74ACT00D KK74ACT00N |
Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4012B KK4012BD KK4012BN |
Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| KK4019B |
Quad AND/OR Select Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
| SL74HCT08N SL74HCT08 SL74HCT08D |
Quad 2-Input AND Gate(High-Performance Silicon-Gate CMOS)
|
SLS[System Logic Semiconductor]
|
| KK4001B |
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
KODENSHI KOREA
|
