| PART |
Description |
Maker |
| SWXHHNXXX |
RECTIFIER DIODES STUD AND FLAT BASE TYPES
|
ETC
|
| 1N3210 1N3210R 1N3211 1N3211R 1N3212 1N3212R 1N321 |
Stud-Mounted Silicon Rectifier Diodes, 15 A
|
Vishay Siliconix
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| D161-200 D161-200X |
Standard Recovery Diodes (Stud and Flat Base Type)
|
Naina Semiconductor ltd.
|
| SKR100 D151-125 SKN100 125NS100 125NS60 125NS40 12 |
Standard Recovery Diodes (Stud and Flat Base Type), 125A
|
Naina Semiconductor ltd.
Naina Semiconductor ltd...
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
|
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| VS-1N1201A VS-1N1202A |
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
|
Vishay Siliconix
|
| 250NS |
Standard Recovery Diodes (Stud and Flat Base Type)
|
Naina Semiconductor ltd...
|
| CPR2-040TRLEADFREE CPR2-010TRLEADFREE CPR2-120TRLE |
2 A, 400 V, SILICON, RECTIFIER DIODE
2 A, 100 V, SILICON, RECTIFIER DIODE
2 A, 1200 V, SILICON, RECTIFIER DIODE
2 A, 200 V, SILICON, RECTIFIER DIODE
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
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