PART |
Description |
Maker |
PBMB200E6 |
Full Bridge IGBT Module 200A/600V
|
Nihon Inter Electronics Corporation
|
C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
CM200DY24E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
|
Vishay Intertechnology, Inc.
|
BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
APTGV30H60T3G |
Full - Bridge NPT & Trench Field Stop? IGBT Power module Full - Bridge NPT & Trench Field Stop垄莽 IGBT Power module
|
Microsemi Corporation
|
APTGF75H120TG |
Full - Bridge NPT IGBT Power Module
|
http://
|
APTGF15H120T3 |
Full - Bridge NPT IGBT Power Module
|
Advanced Power Technology Ltd.
|
APTGF30H60T3 |
Full - Bridge NPT IGBT Power Module 桥不扩散核武器条约IGBT功率模块
|
Advanced Power Technology, Ltd.
|
SPMQ613-01TXV PM0027A PM0027A-15 |
200 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-7 600V, 200A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc. Solid States Devices, Inc Solid States Devices, I...
|
APTGT50H60T1G |
Full - Bridge Trench Field Stop IGBT? Power Module
|
Microsemi Corporation
|