| PART |
Description |
Maker |
| AM29LV400BT55REC AM29LV400BT70EI AM29LV400BB55REC |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
IC,FLASH,4MBIT,CMOS,256KX8 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| EN29LV400AB45RBCP EN29LV400AB45RBIP EN29LV400AB45R |
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution Inc.
Eon Silicon Solution In...
|
| EN29LV400A EN29LV400AB-70BIP EN29LV400AB-70TIP EN2 |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
ETC
Eon Silicon Solution Inc.
|
| LH28F400SU-LC |
4M (512K 】 8, 256K 】 16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| LH28F400SUB-Z0 LH28F400SUB |
4M (512K 】 8, 256K 】 16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| 29F400B-12PC 29F400B-12PI 29F400T-90PC 29F400T-90P |
4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY 4MEGABIT（为512k × 8 / 256K × 16VOLT扇区擦除的CMOS闪存
|
Electronic Theatre Controls, Inc.
|
| MBM29LV400BC-55PCV MBM29LV400BC-55PF MBM29LV400BC- |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT
|
http://
|
| UT62L12816I |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 异步静态RAM高
|
OKI SEMICONDUCTOR CO., LTD.
|
| KH29LV400CB KH29LV400CT |
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MACRONIX INTERNATIONAL
|
| MX29LV400B MX29LV400TTI-70 MX29LV400TTC-70 MX29LV4 |
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
