| PART |
Description |
Maker |
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| MSICSN05120CA MSICSN05120CAE3 MSICSN05120CC MSICSN |
SiC Schottky Diodes
|
Microsemi
|
| MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| TRS20J120C |
SiC Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SCS210AGHR |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS212AJ |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS215AJTLL |
SiC Schottky Barrier Diode
|
ROHM
|
