| PART |
Description |
Maker |
| SCS110AG SCS120AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH04G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| MA4ZD03 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD) Silicon epitaxial planar type
|
Panasonic Semiconductor
|
| RB705D |
Diodes > Schottky Barrier Diodes > Surface mounting small signal type
Schottky barrier diode 肖特基势垒二极管
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| APT10SCD120BCT |
SiC Schottky Diodes
|
Microsemi
|
| SCS206AJHR |
SiC Schottky Barrier Diode
|
Rohm
|
| TRS20J120C |
SiC Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SCS110AGC |
SiC Schottky Barrier Diode
|
Rohm
|
