PART |
Description |
Maker |
MT58L64L32FT-6.8 MT58L64L36FT-6.8 MT58L64V32FT-6.8 |
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的:128K的1864K的x 32/36流通过SYNCBURST的SRAM 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM 2MB的:128K的184K的x 32/36流通过SYNCBURST的SRAM
|
Micron Technology, Inc.
|
MT58L512L18D |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
MT58L128L18FT-10 MT58L128L18FT-7.5 MT58L128V18F MT |
2MB: 128K X 18, 64K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
MICRON[Micron Technology]
|
MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
MT58L512L18D MT58L256L32D MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
MICRON[Micron Technology]
|
DS3816C-512 |
From old datasheet system 16Mb Advanced NV SRAM with Clock
|
MAXIM - Dallas Semiconductor
|
R1LV1616RSD-8SW R1LV1616R R1LV1616RBG-7SI R1LV1616 |
16Mb superSRAM (1M wordx16bit) Memory>Low Power SRAM
|
http:// Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM,带有时
|
Maxim Integrated Products, Inc.
|
WED2CG472512V9D2 WED2CG472512V10D2 WED2CG472512V12 |
16MB (4x512Kx72) SYNC / SYNC BURST, DUAL KEY DIMM SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
EM412M1612VTA EM412M1612VTB EM412M1614VTA EM412M16 |
16Mb ( 2Banks ) Synchronous DRAM
|
List of Unclassifed Man... http:// List of Unclassifed Manufacturers ETC
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