| PART |
Description |
Maker |
| HMC496LP3E HMC496LP311 |
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4 - 7 GHz
|
Hittite Microwave Corporation
|
| HMC795LP5E |
SiGe Wideband Direct Quadrature Modulator w/ vga, 50 - 2800 MHz
|
Hittite Microwave Corporation
|
| HMC334LP4 HMC334LP4E HMC334LP410 |
SiGe WIDEBAND DOWNCONVERTER, 0.6 - 2.7 GHz
|
Hittite Microwave Corporation
|
| THM2003J |
SiGe HBT MMIC Wideband Linear Amplifier
|
TACHYONICS[Tachyonics CO,. LTD]
|
| UPC3245TB-E3 UPC3245TB-E3-A |
SiGe BiCMOS Integrated Circuit Wideband Amplifier IC with 3-Step Gain Selection
|
Renesas Electronics Corporation
|
| T0980 T0980-TJQ T0980-TJS |
SiGe Transmit/ Receive Frontend IC
Sige Transmit/receive Front-end ic
|
ATMEL Corporation
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| T0781 T0781-6C |
1700 - 2300 MHz High Linearity SiGe Active Receiver Mixer RF/MICROWAVE DOWN CONVERTER
1700-2300 MHz high intinerary SiGe active receive mixer
|
Atmel, Corp.
|
| PP0800EB PP1500EA |
Direct ProTek Replacement:PP0800EB 直接太克替代：PP0800EB
Direct ProTek Replacement:PP1500EA
20 A, SILICON SURGE PROTECTOR, TO-92
|
Air Cost Control
PROTEK DEVICES
|
| C460DA1000-0327 C460DA1000-0325 C460DA1000-0311 C4 |
Direct Attach LED Technology Rectangular LED RF Performance
LEDs
Direct Attach DA1000 LEDs
|
Cree, Inc
Marktech Corporate
|
| MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http://
NEC[NEC]
NEC Corp.
|
