| PART |
Description |
Maker |
| NE3510M04-T2 NE3510M04-A NE3510M04-T2-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Laboratories
|
| NE3505M04-T2 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
California Eastern Labs
|
| HLMP-K105 HLMP-D105A HLMP-D101 HLMP-D101A HLMP-K10 |
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS T-1 SINGLE COLOR LED, RED, 3 mm
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS Red Clear with Standoff
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS Red Diffused
T-1 Double Heterojunction AlGaAs Low Current Red LED Lamp
T-1 Double Heterojunction AlGaAs High Intensity Red LED Lamp
T-1 3/4 Double Heterojunction AlGaAs Low Current Red LED Lamp
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| TSFF541009 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHA5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHG6210 TSHG621009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSFF6410 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMG2700 VSMG2700-GS08 VSMG2700-GS18 |
High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSSF4500 TSSF450008 |
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
