PART |
Description |
Maker |
MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应 From old datasheet system 2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MF-MSMD030 MF-MSMD020 MF-MSMD010 MF-MSMD014 MF-MSM |
Ka Band LNA Q-band Power Amplifier 17 - 43 GHz MPA/Multiplier Ka-Band Power Amplifier 27 - 31 GHz 2W Balanced Power Amplifier K Band LNA Ka Band HPA PTC Resettable Fuses
|
Bourns Inc. Bourns Electronic Solutions
|
TGA2578-CP TGA2578-CP-15 |
2 to 6 GHz, 30W GaN Power Amplifier
|
TriQuint Semiconductor
|
T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
MAGX-000035-030000 MAGX-000035-SB1PPR MAGX-000035- |
GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system
|
Mitsubishi
|
RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大 5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Single-band power amplifiers The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
STK433-730-E |
2-channel class AB audio power IC, 30W 30W
|
Sanyo Semicon Device
|
SST13LP05-MLCF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SILICON STORAGE TECHNOLOGY INC
|