PART |
Description |
Maker |
MBM29F800B-12 MBM29F800B-90 MBM29F800T-12 MBM29F80 |
8M (1M ×8/512K ×6) Bit Falsh Memory(V 电源电压1M ×8/512K ×6位闪速存储器)
|
Fujitsu Limited
|
AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory 70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory 120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory x8 Flash EEPROM x8闪存EEPROM x8/x16 Flash EEPROM
|
Atmel, Corp.
|
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
MX27C4000 MX27C4000MC-10 MX27C4000MC-12 MX27C4000M |
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 150 ns, PDSO32 4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32 4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
KM29N040T |
512K x 8 Bit NAND Flash Memory(512K x 8NAND闪速存储器)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 CONNECTOR ACCESSORY 连接器附 CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 JT 16C 16#16 PIN RECP CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC Spansion, Inc. Spansion Inc.
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
MX29LV040CTC-12 MX29LV040CTC-12G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
AT25DF021-MH-T AT25DF021-MH-Y AT25DF021-MHF-Y AT25 |
2-Megabit 2.3Volt or 2.7-Volt Minimum SPI Serial Falsh Memory
|
List of Unclassifed Manufacturers List of Unclassifed Man...
|
KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM(为512k x8位低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
S29CD016J0JDGH114 S29CD016J1JDGH037 S29CD016J1MDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, UUC74
|
Spansion, Inc. SPANSION LLC
|
UPD444008L UPD444008LLE-A10 UPD444008LLE-A12 UPD44 |
4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT 4分位CMOS快速静态存储器12k - Word8 512K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36 512K X 8 STANDARD SRAM, 12 ns, PDSO36 0.400 INCH, PLASTIC, SOJ-36
|
NEC, Corp. Unisonic Technologies Co., Ltd. NEC Corp.
|