| PART |
Description |
Maker |
| M5M5256DP-45LL M5M5256DP-45XL M5M5256DP-55LL M5M52 |
262144-BIT CMOS STATIC RAM
Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-PDIP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5W416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| HM624256AJP-25 |
262144-word x 4-bit High Speed CMOS Static RAM
|
Renesas Technology / Hitachi Semiconductor
|
| M5M5V208AKV M5M5V208AKV-55HI M5M5V208AKV-70HI |
Memory>Low Power SRAM
2097152-BIT(262144-WORD BY 8-BIT)CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| CXK77920YM CXK77920TM CXK77920TM_YM |
262144-word x 9-bit High Speed Synchronous Static RAM
From old datasheet system
|
Sony
|
| HN27C4000G-15 HN27C4000G-10 HN27C4000G-12 HN27C400 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| MS52C1162A MS52C1161A |
65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM
131,072-Word X 8-Bit STATIC RAM 2,097,152-Word X 8-Bit One Time PROM
From old datasheet system
|
OKI
|
| M5M5256CFP-12VLL M5M5256CFP-12VXL M5M5256CFP-15VLL |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
Octal Transparent D-Type Latches With 3-State Outputs 20-TSSOP -40 to 85 262144位（32768 - Word位）的CMOS静态RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Cypress Semiconductor, Corp.
|
| M5M4V4265CJ-5 M5M4V4265CJ-5S M5M4V4265CJ-6 M5M4V42 |
EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V416BTP M5M5V416BTP-70H M5M5V416BTP-85LW M5M5V |
ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost Effective- Efficiency to 85% 4194304位（262144字由16位）的CMOS静RAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位（262144字由16位）的CMOS静态RAM
Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
