| PART |
Description |
Maker |
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
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ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
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| AM49DL322BGT85T AM49DL322BGT85S AM49DL323BGB70T AM |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装MCP）闪存和SRAM32兆位M × 8 2米x 16位）3.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) SPECIALTY MEMORY CIRCUIT, PBGA73
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Spansion Inc.
Advanced Micro Devices, Inc.
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| AM50DL9608GT75IS AM50DL9608GT75IT AM50DL9608GT70IS |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit
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SPANSION[SPANSION]
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| AM75DL9608HGT75IT AM75DL9608HG AM75DL9608HGB70IS A |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
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SPANSION[SPANSION]
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| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
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Advanced Micro Devices, Inc.
|
| AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.2伏的CMOS只引导扇区闪
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Advanced Micro Devices, Inc.
|
| AM29LV800B-100 AM29LV800B-120 AM29LV800B-150 AM29L |
8 Megabit (1048576 x 8-Bit/524288 x 16-Bit) CMOS 3.0 Volt-only Sectored Flash Memory
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
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AMD[Advanced Micro Devices]
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc.
SPANSION LLC
|
| AM29DL400BT-120FC AM29DL400BT-80FCB AM29DL400BT-90 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只，同时作业快闪记忆
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
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http://
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM
1K/2K/4K SPI Serial CMOS EEPROM
16K-Bit CMOS PARALLEL EEPROM
64K-Bit CMOS PARALLEL EEPROM
512K-Bit CMOS Flash Memory
32K/64K-Bit SPI Serial CMOS EEPROM
1 Megabit CMOS Flash Memory
512K-Bit CMOS PARALLEL EEPROM
1 Megabit CMOS Boot Block Flash Memory
256K-Bit CMOS PARALLEL EEPROM
Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer
Precision, Adjustable Shunt Regulator
Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer
128K/256K-Bit SPI Serial CMOS EEPROM
16K-Bit Serial EEPROM, Cascadable
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CATALYST[Catalyst Semiconductor]
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