PART |
Description |
Maker |
MH16V725BWJ-6 MH16V725BWJ-5 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
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http://
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MH16V7245BWJ-5 MH16V7245BWJ-6 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MH16V725BA MH16V725BATJ-6 MH16V725BATJ-5 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MSM51V16400D MSM51V16400DSL MSM51V16400D-50SJ MSM5 |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器:快速页面模式型 DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
M5M44400BJ M5M44400BL M5M44400BRT-5 M5M44400BRT-5S |
FAST PAGE MODE 4194304-BIT(1048576-WORD BY 4-BIT)DYNAMIC RAM (BJ/L/TP/RT) Fast Page Mode 4MBit DRAM
|
Mitsubishi Electric Semiconductor
|
MSM51V17800DSL MSM51V17800D |
DRAM / FAST PAGE MODE TYPE 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics Samsung semiconductor
|
K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
UPD4216160LLE-A80 UPD4217400LG3-A80 UPD42S16400LG3 |
x16 Fast Page Mode DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
EPCOS AG
|
K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
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Samsung Electronic
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