| PART |
Description |
Maker |
| LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MT48LC32M16A2P-75ITC |
SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| CHR CHR2520FC-10MEG-1 |
10 Meg to 100 Meg, 1 Tolerance, Temperature Coefficient to as low as 25 ppm/C
|
Rhopoint Components Ltd.
|
| EDI7F341MV EDI7F341MV150BNC EDI7F2341MV120BNC |
1 Meg x 32 Flash Module(1Megx32闪速存储器模块(存取时间12050ns
EEPROM
|
White Electronic Designs Corporation
|
| MT48H32M16LFCM-8L |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
Micron Technology
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| MT4C40005 MT4C40004 |
4 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| MT16LSDT464A |
4 Meg x 64 SDRAM DIMMs(4M x 64????ㄦ?RAM,????存?瀛???ㄦā??
|
Micron Technology, Inc.
|
| MT9LD272AG-5X MT18LD472A MT18LD472AG-5X MT18LD472A |
2, 4 MEG x 72 NONBUFFERED DRAM DIMMs
|
Micron Technology
|
| RM10R-10K-J |
SURFACE MOUNT RM Series: 1W Thru 10 Meg RESISTORS W
|
RFE international
|
