PART |
Description |
Maker |
DS1250W-150-IND |
NVRAM (Battery Based) NVRAM中(基于电池
|
3M Company
|
DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
M48Z512A-70PM1NBSP M48Z512A-70PM1 |
NVRAM (Battery Based) From old datasheet system
|
ST Microelectronics
|
DS1330BL-70-IND DS1330BL-100-IND DS1330YL-100 |
NVRAM (Battery Based) NVRAM中(基于电池
|
Maxim Integrated Products, Inc.
|
DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中(基于电池
|
Epson ToYoCom, Corp. Maxim Integrated Products, Inc.
|
FM1408S-150DSC FM1408-80DSC FM1608-80DSC FM1608-80 |
NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
STMicroelectronics N.V.
|
FM1208-100DC FM1208-150PC |
NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
Samtec, Inc. Ramtron International, Corp.
|
AN1011 |
BATTERY TECHNOLOGY USED IN NVRAM PRODUCTS FROM ST
|
SGS Thomson Microelectronics
|
CA500A126 CA500A101 CA500A111 CA500A112 CA500A117 |
Serial real-time clock with 44 bytes NVRAM and reset 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 5V or 3V NVRAM supervisor for up to two LPSRAMs 5V or 3V NVRAM supervisor for up to 8 LPSRAMs Serial real-time clock 逻辑IC
|
TE Connectivity, Ltd.
|
M40Z300MH1E M40Z300MH1F M40Z300MH6E M40Z300MH6F M4 |
5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
AN1336 |
Power-fail comparator for NVRAM supervisory devices
|
STMicroelectronics
|