| PART |
Description |
Maker |
| BAS20DWQ-13 BAS21DW-7 BAS20DW-7 BAS20DW-13 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
SURFACE MOUNT HIGH VOLTAGE DUAL SWITCHING DIODE
|
Diodes Incorporated
|
| BAV5004W BAV5004W-7 BAV5004W-15 |
HIGH VOLTAGE SWITCHING DIODE
Discrete - Diodes (Less than 0.5A) - Switching Diodes
|
Diodes Incorporated
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| BAS78A BAS78 Q62702-A910 Q62702-A912 Q62702-A911 Q |
From old datasheet system
Silicon Switching Diodes (Switching applications High breakdown voltage)
|
SIEMENS AG
|
| BAS79A BAS79B Q62702-A916 Q62702-A914 Q62702-A915 |
From old datasheet system
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
|
SIEMENS AG
|
| FALDM375 FALDM450 FALDM400 ALDM500 FALDM500 |
; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80)
Switching Diodes; Surface Mount Type: Y; Package: SM6; XJE016 JEITA: SC-74; Number of Pins: 6; Features: high-speed switching; Internal connection: 3 in 1; Reverse Voltage, max (V): (max 80)
Logic IC
High Efficiency Diodes (HEDs); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Application Scope: Switching mode power supply; Internal Connection: Center tap; T RR (ns): (max 50); I O (A): (max 600)
|
|
| BAS101S BAS10109 |
High-voltage switching diodes
|
NXP Semiconductors
|
| BAV301 |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES
|
Pan Jit International Inc.
|
| BAV19WS-V-GS08 BAV20WS-V-GS08 BAV21WS-V-GS08 BAV19 |
Small Signal Switching Diodes, High Voltage
|
Vishay Siliconix
|
| BAV21WS-V-G |
Small Signal Switching Diodes, High Voltage
|
Vishay Siliconix
|
| CMFD2004I |
DUAL ISOLATED HIGH VOLTAGE SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| BAV100L0G |
Hermetically Sealed Glass High Voltage Switching Diodes
|
Taiwan Semiconductor Co...
|
