| PART |
Description |
Maker |
| C052H103K1G5GA |
Ceramic, 200C, MoldedHighTemp, 0.01 uF, 10%, 100 V, C0G, High Temp, 200C, Radial Molded, Gold Termination, Industrial Grade, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| C1812H122JGGACTU |
Ceramic, 200C, 200C-(CxxxxH), 1200 pF, 5%, 2,000 V, 1812, C0G, SMD, MLCC, High Temperature, Ultra-Stable, Low Loss
|
Kemet Corporation
|
| C052H100J2G5GA |
Ceramic, 200C, MoldedHighTemp, 10 pF, 5%, 200 V, C0G, High Temp, 200C, Radial Molded, Gold Termination, Industrial Grade, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array
|
Topaz Semiconductor
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| APT1001R1HVR |
POWER MOS V 1000V 9A 1.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| RJK1002DPN-E0-T2 |
N-Channel MOS FET 100 V, 70 A, 7.6 m
|
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| PA503T G11239EJ1V0DS00 UPA503T-T1 UPA503T-T2 UPA50 |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MOS Field Effect Transistor
From old datasheet system
Silicon transistor
|
NEC
|
| SD2107DD |
-100 V, 5 ohm, P-channel enhancement-mode D-MOS power FET
|
Topaz Semiconductor
|
|
