| PART |
Description |
Maker |
| BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
| BLD6G22LS-50112 BLD6G22L-50112 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors N.V.
|
| MHL21336 |
2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| SKY65120 |
2110-2170 MHz High Linearity / 2W Power Amplifier
|
Skyworks Solutions
|
| PTF210451 PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF211301 PTF211301A |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
|
Infineon Technologies AG
|
| PTAC210802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ?2170 MHz
|
Infineon Technologies A...
|
| PTFA211801E PTFA211801F |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| SKY66189-11 |
2110 to 2170 MHz Linear Power Amplifier
|
Skyworks Solutions Inc.
|
| MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
