PART |
Description |
Maker |
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF SWITCH Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36 Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM) 2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation SEMICOA[Semicoa Semiconductor]
|
MX29LV040CTC-12 MX29LV040CTC-12G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 |
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
|
Atmel Corp. Atmel, Corp.
|
IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36 TRANS NPN W/RES 80 HFE NS-B1 3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
AS29LV400 AS29LV400B-70TC AS29LV400B-70TI AS29LV40 |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time 3V 512K x 8/256K x16 CMOS Flash EEPROM
|
Alliance Semiconductor List of Unclassifed Manufacturers
|
W29C040T-12 W29C040T-90B W29C040T-12B W29C040P-12 |
512K X 8 CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Winbond Electronics, Corp.
|
AS6WA5128 |
3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM(3.0V 3.6V 512K × 8 Intelliwatt 低功CMOS 静态RAM) 3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM 3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns 5V 512K x 8 CMOS flash EEPROM, access time 55ns 5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|