| PART |
Description |
Maker |
| ER3400 ER3400IR ER3400HR |
4096 Bit Electrically Alterable Read Only Memory
From old datasheet system
4096 Bit Electrically Alterable ROM
|
List of Unclassifed Manufacturers
ETC[ETC]
General Semiconductor
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| 24LC02BTI_SNG 24LC02BI_SNG 24LC02BI_OTG 24LC02BI_P |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ ...
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24AA02 features hardware write protect, Schmitt trigger inp
2K I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
| BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM
4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| IS25C08-2PI |
8K-BIT/16K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
INTEGRATED SILICON SOLUTION INC
|
| M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| IS93C66A-3PI IS93C56A-2PI IS93C56A-2PLI IS93C56A-2 |
2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
Integrated Silicon Solution, Inc
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| BR24L02 BR24L02FJ-W BR24L02FVM-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| HN58064 |
8192-Word x 8-Bit Electrically EPROM
|
Hitachi
|
| BR24L04FVM-W BR24L04-W |
512×8 bit electrically erasable PROM
|
Rohm
|
