PART |
Description |
Maker |
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
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SIEMENS AG
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GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66 DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 50 ns, PDSO44 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM) 16MbMbit x 8 I/O x 2 Bank)Synchronous DRAM(16M位(1Mx 8 I/O x 2 组)同步动态RAM)
|
IBM Microeletronics
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG SMSC, Corp.
|
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