| PART |
Description |
Maker |
| BFY183 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Siemens Semiconductor Group
|
| BFY280 BFY280H |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)
|
Infineon
Siemens Semiconductor Group
|
| BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BFY18111 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFY40511 |
HiRel NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| BFY450P BFY450 BFY450ES BFY450H BFY450S |
HiRel NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| 6506A SP6506A |
0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE
Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options
|
MICROSEMI CORP-SCOTTSDALE
MICROSEMI[Microsemi Corporation]
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
