| PART |
Description |
Maker |
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K7N801845B K7N803645B DSK7N803645B K7N803649B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact
HTSNK, C X-FLOW, .4H LOW FLOW, THREADED
HTSNK C X-FLOW .4H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
| M-201-T43 M-201-T M-201-T31 M-201-T33 M-201-T41 |
High flow,adjustable flow switch with right-angle flow
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| K7P801811M-H20 K7P801811M-H21 K7P801811M-H25 K7P80 |
256Kx36 & 512Kx18 SRAM
256Kx36 & 512Kx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EG1126 |
Integrated Flow Function, Off-LIne Flow Model PWM controller
|
Jingjing Microelectroni...
|
| K7P803611M-H21 K7P801811M K7P801811M-H20 K7P801811 |
256Kx36 & 512Kx18 SRAM
|
SAMSUNG[Samsung semiconductor]
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| K7A803609A K7A801809A |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| KM736V887 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
