| PART |
Description |
Maker |
| S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
| IS43DR81280A IS43DR16640A-3DBL 46DR16640A 46DR8128 |
1Gb (x8, x16) DDR2 SDRAM
Clock frequency up to 400MHz
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| K5N1229ACD-BQ12 |
512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
|
Samsung semiconductor
|
| HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 |
512Mb (64Mx8) DDR266A (2-3-3)
512Mb (64Mx8) DDR200 (2-2-2)
512Mb (32Mx16) DDR200 (2-2-2)
512Mb (128Mx4) DDR200 (2-2-2)
512Mb (64Mx8) DDR333 (2.5-3-3) ？的512Mb4Mx8DDR333内存.5-3-3）？
|
Electronic Theatre Controls, Inc.
|
| HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HM62V16256CLBP-5SL HM62V16256CLBP-7 HM62V16256CLBP |
4 M SRAM (256-kword x16-bit)
|
Renesas Electronics Corporation
|
| IDT728980 IDT728980J IDT728980J8 |
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 5.0V
TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
|
IDT[Integrated Device Technology]
|
| HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
