PART |
Description |
Maker |
H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54 4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG SMSC, Corp.
|
HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
MT48LC4M32LFTG-8ITG MT48V4M32LFTG-8ITG MT48V4M32LF |
8M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
STMicroelectronics N.V.
|
IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
M52D32321A-10BG |
512K x 32Bit x 2Banks Synchronous DRAM 1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|