PART |
Description |
Maker |
W964B6BBN80I W964B6BBN W964B6BBN70 W964B6BBN70E W9 |
Low Power Mobile Products 1M WORD X 16BIT LOW POWER PSEUDO SRAM
|
Winbond Electronics WINBOND[Winbond]
|
K6F4016U4EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4016S4DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4016R6CFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
AKD5355 AK5355VN AK535505 AK5355VT |
Low Power 16bit ΔΣ ADC
|
Asahi Kasei Microsystems Asahi Kasei Microsystem...
|
AK535505 AKD5355 |
Low Power 16bit ツヒ ADC
|
Asahi Kasei Microsystems
|
KM416V4100C KM416V4000C KM416V4100CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
N08L1618C2AB2 N08L1618C2A N08L1618C2AB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
AKD4641EN-A |
16bit stereo CODEC with built-in Microphone-amplifier and 16bit Mono CODEC for Bluetooth Interface.
|
Asahi Kasei Microsystems
|
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A64S06162AG-70UF A64S06162A A64S06162A-70U A64S061 |
16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
|
AMIC Technology Corporation AMICC[AMIC Technology]
|
TB62708N EE08582 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER From old datasheet system 16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS
|
Toshiba Semiconductor
|