| PART |
Description |
Maker |
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| DPZ256X16IH3-17C DPZ256X16IH3-17I DPZ256X16IH3-17B |
x16 Flash EEPROM Module x16闪存EEPROM模块
x32 Flash EEPROM Module X32号，闪存EEPROM模块
|
Power-One, Inc.
AVX, Corp.
Vicor, Corp.
|
| SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位（x16）的多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
|
| HY29DS323 HY29DS322 HY29DS323BF-10 HY29DS322BF-12 |
EEPROM EEPROM
32 MEGABIT (4M X 8/2M X16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY
|
Hynix Semiconductor, Inc.
|
| E28F004BX-T70 PA28F400BX-T70 E28F004BX-B70 TE28F00 |
x8 Flash EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Intel, Corp.
|
| E28F002BX-T70 PA28F200BX-T70 E28F002BX-B70 PA28F20 |
x8/x16 Flash EEPROM
x8 Flash EEPROM x8闪存EEPROM
|
Intel, Corp.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| LH28F800SGHB-L10 LH28F800SGHB-L70 LH28F800SGR-L10 |
x16 Flash EEPROM x16闪存EEPROM
|
Sharp, Corp.
|
| MX29F8100MC-12C4 MX29F8100MC-10C4 MX29F8100MC-15C4 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Renesas Electronics, Corp.
|
| DPZ128X16IHY-25B DPZ128X16IHY-25C DPZ128X16IHY-25I |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
Glenair, Inc.
Air Cost Control
Vicor, Corp.
TE Connectivity, Ltd.
HIROSE ELECTRIC Co., Ltd.
L-com, Inc.
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MB84VD22281EA-90-PBS MB84VD22282EA-90-PBS MB84VD22 |
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
Fujitsu Microelectronics
|
