| PART |
Description |
Maker |
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| CS5464-IS |
Three-channel, Single-phase Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRF533R IRF532R IRF530 IRF530R IRF531 IRF533 IRF53 |
N-Channel Power MOSFETs Avalanche Energy Rated
|
HARRIS[Harris Corporation]
|
| PHP6N60E PHB6N60E |
PowerMOS transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHD3N40E PHP3N40E PHB3N40E |
PowerMOS transistors Avalanche energy rated 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MAL222091001E3 MAL222090004E3 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| EM3-DINAV93DX EM3-DINAV23CO EM3-DINAV23CR EM3-DINA |
Energy Management Energy Meter with plug-in Output Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
