PART |
Description |
Maker |
DAMB5111 DAMB5111-X |
DAICO Narrowband Amplifiers DAICO Broadband Amplifiers
|
DAICO[DAICO Industries, Inc.]
|
DAMB6413-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
DAMB6414-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
DAMB6443-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
DAMB6462-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
DAMB6432-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
DAMB6422-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
DAMB6416-X |
DAICO Broadband Amplifiers
|
DAICO Industries
|
CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
DAML6284 |
DAICO Narrowband Amplifiers
|
DAICO Industries
|
BFR92W Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管(对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关) NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MAX3537UTC |
Broadband Variable-Gain Amplifiers
|
MAXIM - Dallas Semiconductor
|