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UPA1730G-E1 - Pch enhancement type power MOS FET

UPA1730G-E1_1742062.PDF Datasheet
 Full text search : Pch enhancement type power MOS FET

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42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
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2SJ621 2SJ621-T2B 2SJ621-T1B RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
 NEC Corp.
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UPA1816 UPA1816GR-9JG UPA1816GR-9JG-E2 UPA1816GR-9 Pch enhancement MOS FET
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UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9 Nch enhancement type power MOS FET
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STW5NA100 5367 STH5NA100FI STH5NA100 OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
 ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
 
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