| PART |
Description |
Maker |
| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五（巴西）直| 5.5AI（四）|计划生育
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五（巴西）直| 8A条（丁）|计划生育
|
Mitsubishi Electric, Corp.
|
| UPA1520B UPA1520BH |
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
From old datasheet system
TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
|
NEC[NEC]
NEC Electron Devices
NEC Corp.
|
| IRHQ6110 IRHQ63110 |
TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 3A I(D) | LLCC 晶体管| MOSFET的|阵|互补| 100V的五（巴西）直| 3A条（丁）| LLCC
RADIATION HARDENED POWER MOSFET
|
HIROSE ELECTRIC Co., Ltd.
International Rectifier
|
| UPA1520H |
TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
From old datasheet system
|
NEC Electron Devices
|
| MRF9002NR2 |
RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
|
Freescale Semiconductor, Inc
|
| LB1212 LB1213 LB1216 LB1214 LB1211 LB1217 LB1215 L |
General Purpose Transistor Array
From old datasheet system
Generral-Purpose Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| ALD1117 ALD1117DA ALD1117PA ALD1117SA ALD1107 ALD1 |
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
|
ALD[Advanced Linear Devices]
Advanced Linear Devices, Inc.
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| DDC144NS |
100mA PRE-BIASED TRANSISTOR ARRAY USING DUAL NPN TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| MC3356 MC3346 MC3346D MC3356P |
GENERAL PURPOSE TRANSISTOR ARRAY ONE DIFFERENTIALLY CONNECTED PAIR AND THREE ISOIATED TRANSISTOR ARRAYS
|
MOTOROLA[Motorola, Inc]
|
| LB1275 |
7-Unit, Darlington Transistor Array
7-Unit Darlington Transistor Array
7-Unit,Darlington Transistor Array(7单元达林顿晶体管阵列)
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| UPA1437 UPA1437H |
PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
NEC[NEC]
|
