| PART |
Description |
Maker |
| MC-405 MC-406 |
SMD LOW/MEDIUM-FREQUENCY CRYSTAL UNIT
|
爱普生（中国）有限公
|
| MC-405 MC-406 |
SMD LOW/MEDIUM-FREQUENCY CRYSTAL UNIT
|
Epson Company
|
| MC-146 |
THIN SMD LOW/MEDIUM-FREQUENCY CRYSTAL UNIT
|
Epson Company
|
| MC-206 |
THIN SMD LOW/MEDIUM-FREQUENCY CRYSTAL UNIT
|
Epson Company
|
| MC-405 MC-406 |
(MC-405 / MC-406) SMD LOW/MEDIUM-FREQUENCY CRYSTAL UNIT
|
Epson Company
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| AB310 AB310-FREQ-16-B-5-M-T |
QUARTZ CRYSTAL RESONATOR, 3.5 MHz - 3.99 MHz
LOW FREQUENCY CYLINDRICAL TYPE MICROPROCESSOR CRYSTAL
|
Abracon Corporation
|
| GSX-250 |
SM Crystal LOW FREQUENCY
|
Golledge Electronics Ltd
|
| LT011 LT011PS |
Microprocessor Crystal; Frequency:24MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process
LT011PS
|
Sharp Corporation
Sharp Electrionic Components
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
